Cryogenically Cooled Broad-Band Gaas Field-Effect Transistor Preamplifier
نویسندگان
چکیده
منابع مشابه
Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
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We present the first multi-Watt demonstration of a diode pumped cryogenically cooled neodymium-doped yttrium aluminum garnet (YAG) laser operating at 946 nm on the (4)F(3/2) → (4)I(9/2) transition. 3.8 W of continuous wave output power for 12.8 W of absorbed pump was obtained with a slope efficiency of 47%. In addition, we made an extensive characterization of the spectroscopic properties aroun...
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This work describes a cryogenic, electro-optically -switched Yb:YAG laser that generates 114-W average TEM power with 47% optical-to-optical efficiency. Pulse repetition frequency is 5 kHz, pulse duration is 16 ns full-width at half-maximum, and is less than 1.05.
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1984
ISSN: 0018-9499
DOI: 10.1109/tns.1984.4333302